Full quantum simulation of Shockley–Read–Hall recombination in p-i-n and tunnel diodes

We have included Shockley-Read-Hall (SRH) generation/recombination in Non-equilibrium Green’s function (NEGF) calculations via a multiphonon relaxation model. The model has been used to study how the presence of defects affects current–voltage characteristics GaAs p-i-n diodes, and an InGaAs tunnel diode. Regarding we show that SRH is responsible for ideality factors approaching theoretical value two forward bias regime, while reverse recombination current density varies slowly with applied voltage. In all considered cases, located center active region proved be most effective allowing trap-assisted tunneling from valence conduction band. Finally, inclusion NEGF simulations Esaki diodes permits predict realistic degradation peak-to-valley ratio. • Simulations at intrinsic regions are ones mostly involved trap assisted tunneling. Ideality larger than short explained terms enhanced due band bending. Tunnel able increase valley currents corresponding reduction